Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study
Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study
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DOI：
10.3390/mi11010053
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发表时间：
2020-01-01
期刊：
影响因子：
3.4
通讯作者：
Kim, Hyun-Seok
中科院分区：
文献类型：
--
作者：
Jang, Kyu-Won;Hwang, In-Tae;Kim, Hyun-Seok
在这项研究中，我们研究了AlGaN/GaN高电子迁移率晶体管（hemt）的工作特性，通过采用铜填充沟槽和通孔结构来改善散热。因此，我们使用基本的t栅HEMT器件来构建热结构。为了确定器件结构中的热流，应用了GaN、SiC和Cu材料的导热模型和传热特性。首先，我们在SiC HEMT上模拟了碱性GaN的直流（DC）特性，以确认AlGaN/GaN HEMT的自热效应。然后，为了验证铜填充热结构的散热效果，我们比较了阈值电压、跨导、饱和电流和击穿电压等直流特性。最后，我们估计并比较了二维电子气通道的晶格温度、漏侧栅极头边缘附近的垂直晶格温度，以及铜填充热沟槽和通孔结构的瞬态热分析。通过本研究，我们可以通过将有效的散热结构应用于AlGaN/GaN HEMT来优化器件的工作特性。
In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.