Charge-gap formation in the insulating states of AV10015 (A=Ba, Sr)
Charge-gap formation in the insulating states of AV10015 (A=Ba, Sr)
复制标题
AV10015 绝缘状态下的电荷间隙形成（A=Ba、Sr）
DOI：
10.1103/physrevb.85.085106
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发表时间：
2012
影响因子：
3.7
通讯作者：
et al
中科院分区：
文献类型：
--
作者：
M.Hoshino;et al
我们用 V 测量了 SrVO 的光电导谱，它表现出绝缘行为，没有任何相变，并将结果与 BaVO 的结果进行了比较，BaVO 的轨道排序低于 K。我们发现，SrVO 中软能隙在最低温度下打开，但随着温度升高而崩溃，这与下面 BaVO 中的有限电荷能隙 (eV) 形成鲜明对比。我们还发现SrVO和BaVO之间的电导谱差异甚至超过了Ba，这表明轨道有序性的涨落在BaVO中产生了赝能隙。
We measured the optical conductivity spectra of SrVOwith V, which exhibits an insulating behavior without any phase transition, and compared the results with those of BaVO, which shows orbital ordering belowK. We found that a soft gap opens at the lowest temperature but it collapses with increasing temperature in SrVO, in contrast to a finite charge gap (eV) in BaVObelow. We also found that the difference of the conductivity spectra between SrVOand BaVOevolves even aboveof Ba, indicating that the fluctuation of orbital ordering produces a pseudogap in BaVO.