Mask-free fabrication of inverted-pyramid texture on single-crystalline Si wafer
Mask-free fabrication of inverted-pyramid texture on single-crystalline Si wafer
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DOI：
10.1016/j.optlastec.2014.04.009
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发表时间：
2014-11-01
影响因子：
5
通讯作者：
Lee, Myeongkyu
中科院分区：
文献类型：
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作者：
Yang, Bogeum;Lee, Myeongkyu
在这里，我们表明，倒金字塔（IP）纹理可以通过简单地照射表面与纳秒脉冲激光在532 nm的单晶硅晶片，然后通过碱腐蚀制造。该过程基本上基于材料的激光诱导熔化。当暴露于三个干涉激光束时，表面根据干涉图案以周期性方式局部熔化。这在表面上产生了凹孔，因为熔化的材料溢出并在周边凝结。当随后用KOH蚀刻时，凹孔的内部形态由于位置依赖性的不同蚀刻速率而变成IP形状。可以获得均匀的IP结构，最小反射率为15.8%。(C)2014爱思唯尔有限公司版权所有。
We here show that inverted-pyramid (IP) textures can be fabricated on single-crystalline Si wafer by simply irradiating the surface with a nanosecond pulsed laser at 532 nm, followed by alkali etching. This process is fundamentally based on the laser-induced melting of material. When exposed to three interfering laser beams, the surface was locally melted in a periodic fashion in accordance with the interference pattern. This generated concave holes on the surface because the melted material overflowed and condensed at the periphery. When subsequently etched by KOH, the internal morphology of the concave holes changed into an IP shape as a result of the position-dependent different etching rates. Uniform IP structures could be obtained with a minimum reflectance of 15.8%. (C) 2014 Elsevier Ltd. All rights reserved.