High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact
High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact
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DOI：
10.1143/jjap.45.l1048
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发表时间：
2006-10-01
期刊：
影响因子：
--
通讯作者：
Akasaki, Isamu
中科院分区：
文献类型：
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作者：
Fujii, Takahiro;Tsuyukuchi, Norio;Akasaki, Isamu
在p-GaN/u-AlxGa 1-xN/u-GaN结异质结场效应晶体管中，栅压（VG）从3 V变化到0 V，漏源电流密度（I-DS）的开/关比超过6个数量级。这些器件在V-DS和VG为10和0 V时具有极低的泄漏IDS密度，低至15.5 nA/mm。在V-G = 3.0 V时，导通电阻低至2.65 m Ω中心点cm（2）。
An excellent on/off ratio of drain-source current (I-DS) density over 6 orders of magnitude by changing the gate voltage (VG) from 3 to 0 V was confirmed in p-GaN/u-AlxGa1-xN/u-GaN junction heterostructure field-effect transistors. These devices show an extremely low leakage IDS density of as low as 15.5 nA/mm at V-DS and VG of 10 and 0 V. On resistance is as low as 2.65 m Omega center dot cm(2) at V-G = 3.0 V.