High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy
High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy
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DOI：
10.1063/1.117793
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发表时间：
1996-07-29
影响因子：
4
通讯作者：
Tu, CW
中科院分区：
文献类型：
--
作者：
Niki, S;Fons, PJ;Tu, CW
通过分子束外延在伪晶格匹配衬底上生长CuInSe2薄膜，该衬底由1 μ m厚的In0.29Ga0.71As层组成，该层生长在线性成分渐变的InxGa1-xAs缓冲液（0小于等于x小于等于0.29）上，依次生长在GaAs上（001）。并与直接生长在GaAs（001）上的薄膜的性能进行了比较。在伪晶格匹配衬底上生长的CuInSe2的高分辨率x射线衍射分析表明，CuInSe2薄膜的残余应变显著降低。首次在CuInS2薄膜上观察到以尖锐的自由激子发射为主的光致发光光谱，表明晶体质量得到了显著改善，点缺陷密度大幅降低。(C) 1996年美国物理研究所。
CuInSe2 films have been grown by molecular beam epitaxy on pseudo-lattice-matched substrates that consist of a 1-mu m-thick In0.29Ga0.71As layer grown on a linearly composition-graded InxGa1-xAs buffer (0 less than or equal to x less than or equal to 0.29) grown in turn on GaAs (001). The properties of these films have been compared with those of the films grown directly on GaAs (001). High resolution x-ray diffraction analysis on CuInSe2 grown on pseudo-lattice-matched substrates indicated substantial reduction on residual strain in the CuInSe2 films. A photoluminescence spectrum dominated by sharp free exciton emissions has been observed for the first time from CuInS2 films indicative of significant improvement in crystalline quality and substantial reduction in the point defect density. (C) 1996 American Institute of Physics.