Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors
Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors
复制标题
DOI：
10.1039/c3tc31899k
复制
发表时间：
2014-01-01
影响因子：
6.4
通讯作者：
Yang, Bin
中科院分区：
文献类型：
--
作者：
Feng, Wei;Wang, Xiaona;Yang, Bin
二维（2D）半导体仅限于石墨烯类似层状材料，因此制造厚度仅为几个原子层的二维非层状材料极具挑战性。在这里，我们报道了用相应的GaSe纳米片成功制备了2D Ga2O3和基于2D Ga2O3的太阳盲光电探测器。制备的二维β - ga2o3为多晶，厚度小于10 nm。此外，我们还展示了一种基于2D β - ga2o3的光电探测器，该探测器对紫外线（254 nm）具有灵敏、快速和稳定的光响应。光电探测器的响应率、探测率和外量子效率分别为3.3 A W-1、4.0 x 10(12) Jones和1600%，表明二维Ga2O3在太阳盲光电探测器中具有很大的应用潜力。
Two-dimensional (2D) semiconductors are limited to graphene analogues of layered materials, so it is extremely challenging to fabricate 2D non-layered materials with thicknesses of only a few atomic layers. Here, we report the successful fabrication of 2D Ga2O3 from the corresponding GaSe nanosheets and a solar blind photodetector based on 2D Ga2O3. The as-prepared 2D beta-Ga2O3 is polycrystalline and has a thickness of less than 10 nm. Furthermore, we demonstrate a photodetector based on 2D beta-Ga2O3, which show a sensitive, fast and stable photoresponse to ultraviolet radiation (254 nm). The responsivity, detectivity and external quantum efficiency of the photodetector are 3.3 A W-1, 4.0 x 10(12) Jones and 1600%, respectively, indicating that the 2D Ga2O3 has great potential for application for solar-blind photodetectors.