67-1: Invited Paper: Doped Organic Transistors - Increased Stability and Reproducibility for Active Matrix Displays
67-1: Invited Paper: Doped Organic Transistors - Increased Stability and Reproducibility for Active Matrix Displays
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67-1：特邀论文：掺杂有机晶体管 - 提高有源矩阵显示器的稳定性和再现性
DOI：
10.1002/sdtp.12241
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Lüssem, Björn
中科院分区：
文献类型：
--
作者：
Liu, Shiyi;Al-Shadeedi, Akram;Kaphle, Vikash;Lüssem, Björn
掺杂有机场效应晶体管（OFFEFET）越来越被接受为提高其性能和稳定性的一种手段，特别是对于AM显示器。本文提出了一种掺杂耗尽型OFFET的理论。沟道掺杂的好处进行了讨论，特别是在减少栅极偏置应力的影响。
Doping Organic Field‐Effect Transistors (OFETs) is increasingly accepted as a means to increase their performance and stability, in particular for AM displays. A theory of doped depletion type OFETs is presented. The benefits of channel doping are discussed, in particular in terms of a reduction of gate bias stress effects.