Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures
Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures
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DOI：
10.1002/adfm.201000265
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发表时间：
2010-08-09
影响因子：
19
通讯作者：
Kohlstedt, Hermann
中科院分区：
文献类型：
--
作者：
Hambe, Michael;Petraru, Adrian;Kohlstedt, Hermann
实验结果完全复杂的氧化物铁磁/铁电/铁磁隧道结中的隧道磁阻被修改通过施加低电场脉冲的结。实验表明，铁电势垒中与极化反转相关的离子位移会影响铁磁-铁电界面处的复杂能带结构。理论预测的磁电界面效应的框架中的结果进行了讨论，并可能导致新的多态存储器设备。
Experimental results on entirely complex oxide ferromagnetic/ferroelectric/ferromagnetic tunnel junctions are presented in which the tunneling magnetoresistance is modified by applying low electric field pulses to the junctions. The experiments indicate that ionic displacements associated with the polarization reversal in the ferroelectric barrier affect the complex band structure at ferromagnetic ferroelectric interfaces. The results are discussed in the framework of the theoretically predicted magnetoelectric interface effect and may lead to novel multistate memory devices.