InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition
InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition
复制标题
金属有机化学气相沉积法生长的 InGaAs/InP 量子阱下界面 InAsP 岛
DOI：
10.1063/1.107047
复制
发表时间：
1992
影响因子：
4
通讯作者：
D. Bimberg
中科院分区：
文献类型：
--
作者：
J. Böhrer;A. Krost;D. Bimberg
The optical properties of narrow InGaAs/InP quantum wells and their dependence on the gas switching procedure during the metalorganic chemical vapor deposition growth process are studied. A transition from In1−xGaxAs monolayer to InAs1−xPx monolayer splitting is observed in the photoluminescence spectrum, if the AsH3 purging time of the InP surface is equal larger than 2 s. This transition is attributed to a P‐As exchange at the lower interface (InGaAs on InP) leading to InAs1−xPx interfacial islands, which are larger than the excitonic diameter.
