Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack
Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack
复制标题
DOI：
10.7567/apex.7.044101
复制
发表时间：
2014-04-01
影响因子：
2.3
通讯作者：
Kuzuhara, Masaaki
中科院分区：
文献类型：
--
作者：
Hatano, Maiko;Taniguchi, Yuya;Kuzuhara, Masaaki
在本文中，我们报道了使用ZrO₂/Al₂O₃作为栅极介质堆叠制造的AlGaN/GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管（MIS - HEMT）。我们研究了ZrO₂（2纳米）/Al₂O₃（2纳米）/AlGaN/GaN MIS - HEMT的栅极泄漏特性以及由于电流崩塌导致的动态导通电阻，并与具有单一栅极绝缘体（分别为Al₂O₃（4纳米）和ZrO₂（4纳米））的MIS - HEMT进行了比较。研究发现，Al₂O₃栅极绝缘体在降低正向栅极泄漏和抑制电流崩塌方面是有效的，而使用ZrO₂电介质则抑制了反向栅极泄漏电流。复合ZrO₂/Al₂O₃ MIS - HEMT在高达200℃的温度下，在栅极泄漏和动态导通电阻方面都表现出优异的热稳定性。（C）2014日本应用物理学会
In this paper, we report on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) fabricated using ZrO2/Al2O3 as a gate dielectric stack. Gate leakage characteristics as well as dynamic on-resistance due to current collapse have been studied for a ZrO2 (2 nm)/Al2O3 (2 nm)/AlGaN/GaN MIS-HEMT and compared with those for MIS-HEMTs with a single gate insulator of Al2O3 (4 nm) and ZrO2 (4 nm). It was found that an Al2O3 gate insulator was effective in reducing the forward gate leakage and in suppressing the current collapse, whereas the use of the ZrO2 dielectric resulted in a suppressed reverse gate leakage current. The composite ZrO2/Al2O3 MIS-HEMT exhibited superior thermal stability in both gate leakage and dynamic on-resistance up to 200 degrees C. (C) 2014 The Japan Society of Applied Physics