Field-effect transistor using a solid electrolyte as a new oxygen sensor
Field-effect transistor using a solid electrolyte as a new oxygen sensor
复制标题
使用固体电解质的场效应晶体管作为新型氧传感器
DOI：
10.1063/1.341038
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发表时间：
1988
影响因子：
3.2
通讯作者：
H. Miyagi
中科院分区：
文献类型：
--
作者：
Y. Miyahara;K. Tsukada;H. Miyagi
本文提出了一种基于固体电解质的场效应晶体管(FET)作为一种新型的氧传感器。该传感器是通过在绝缘栅场效应晶体管(IGFET)的栅绝缘层上沉积一层氧化钇稳定的氧化锆(YSZ)制成的。由于IGFET具有转换阻抗的能力，即使YSZ的阻抗很高，也可以稳定地检测在YSZ层和铂栅电极之间的界面处产生的电位变化。该传感器在20 °C下具有良好的重复性，在0.01atm~1atm范围内，输出电压与氧分压的对数呈线性关系。传感器的灵敏度取决于铂栅电极的厚度和YSZ层的溅射条件。虽然在室温下对氢气和一氧化碳的选择性不好，但将工作温度提高到100 °C可以改善其选择性。
A field‐effect transistor (FET) using a solid electrolyte is proposed in the present study as a new oxygen sensor. The sensor is fabricated by depositing a thin layer of yttria‐stabilized zirconia (YSZ) on a gate insulator of an insulated gate field‐effect transistor (IGFET). As an IGFET has an ability to transform impedance, the potential change produced at the interface between the YSZ layer and a platinum gate electrode can be detected stably, even if the impedance of the YSZ is very high. The response of the fabricated sensor showed good reproducibility at 20 °C. A linear relationship between output voltage and logarithmic partial pressure of oxygen was obtained in the range from 0.01 to 1 atm. Sensitivity of the sensor was found to depend on the thickness of the Pt‐gate electrode and sputtering conditions of the YSZ layer. Although selectivity to hydrogen and carbon monoxide was not good at room temperature, it could be improved by increasing the operating temperature to 100 °C. The developed sensor ...