Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping
Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping
复制标题
氧共掺杂掺铒 GaAs 中 Er-O 发光中心的原子构型
DOI：
10.1063/1.357319
复制
发表时间：
1994
影响因子：
3.2
通讯作者：
J. Nakata
中科院分区：
文献类型：
--
作者：
K. Takahei;A. Taguchi;Y. Horikoshi;J. Nakata
本文研究了GaAs中Er发光中心的结构，利用其4f-壳层内发光光谱作为原子探针来识别原子构型。该Er中心通过金属有机化学气相沉积与O共掺杂在GaAs中形成，并且该中心在带隙以上光激发下显示出高效率和尖锐的发光光谱。在Al_（0.01）Ga_（0.99）As：Er，O的光谱中，GaAs：Er，O的一条发光线分裂成八条以上的发光线。由于添加1% Al而导致的这种剧烈变化可以通过假设来解释，由于Al原子与O原子反应的高趋势，Al原子优先占据两个O原子的最近邻Ga位置，这两个O原子都与Er原子耦合。根据发光光谱和卢瑟福背散射及二次离子质谱的附加实验，我们提出所研究的Er发光中心的结构是Er占据Ga亚晶格。
This article investigates the structure of an Er luminescence center in GaAs by using its intra‐4f‐shell luminescence spectrum as an atomic probe to identify the atomic configuration. This Er center is formed in GaAs by metalorganic chemical vapor deposition with O codoping and the center shows a high efficiency and a sharp luminescence spectrum under above‐band‐gap photoexcitation. A single luminescence line in the spectrum of a GaAs:Er,O splits into more than eight lines in the spectrum of Al0.01Ga0.99As:Er,O. This drastic change due to the addition of 1% Al can be explained by assuming that, because of the high tendency of Al atoms to react with O atoms, the Al atoms preferentially occupy the nearest‐neighbor Ga sites of two O atoms, both of which are coupled with the Er atom. Based on the luminescence spectra and additional experiments of Rutherford backscattering and secondary ion mass spectroscopy, we propose that the structure of the Er luminescence center under study is Er occupying the Ga sublatt...