Electronic structure of YbCu_2Ge_2 studied by soft x-ray angle-resolved photoemission spectroscopy
Electronic structure of YbCu_2Ge_2 studied by soft x-ray angle-resolved photoemission spectroscopy
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软X射线角分辨光电子能谱研究YbCu_2Ge_2的电子结构
DOI：
10.1103/physrevb.84.195121
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发表时间：
2011
影响因子：
3.7
通讯作者：
et al
中科院分区：
文献类型：
--
作者：
A.Yasui;Y.Onuki;et al
我们通过使用软 X 射线角分辨光电子能谱测量了 YbCuGe 的三维能带结构和费米面 (FS)，YbCuGe 最近被认为是一种近二价的 Yb 基化合物。我们阐明，Yb 贡献有限的能带穿过费米能级，并轻微参与 FS 的形成，与 YbCuGe 的价态涨落状态一致。基于局部密度近似（LDA）的相对论能带结构计算可以很好地解释所获得的价带色散和FS。这些结果表明，LDA 计算是理解 YbCuGeas 以及近二价 Yb 基化合物的电子态的良好起点。
We have measured three-dimensional band structure and Fermi surfaces (FSs) of YbCuGe, which has recently become recognized as a nearly divalent Yb-based compound, by using soft x-ray angle-resolved photoemission spectroscopy. We clarified that the bands with finite Ybcontribution cross the Fermi level and are slightly involved in the formation of the FSs, in line with the valence-fluctuating state of YbCuGe. The obtained valence-band dispersions and the FSs are well explained by a relativistic band-structure calculation based on a local-density-approximation (LDA). These results suggest that the LDA calculation is a good starting point for understanding of the electronic state of YbCuGeas well as nearly divalent Yb-based compounds.