van der Waals epitaxy of monolayer hexagonal boron nitride on copper foil: growth, crystallography and electronic band structure
van der Waals epitaxy of monolayer hexagonal boron nitride on copper foil: growth, crystallography and electronic band structure
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DOI：
10.1088/2053-1583/2/2/025003
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发表时间：
2015-06-01
期刊：
影响因子：
5.5
通讯作者：
Wilson, Neil R.
中科院分区：
文献类型：
--
作者：
Wood, Grace E.;Marsden, Alexander J.;Wilson, Neil R.
研究了用低压化学气相沉积法在铜箔上生长六方氮化硼（h-BN）。在低压下，h-BN的生长通过三角形岛的成核和生长进行。岛的取向和多晶铜箔的局部晶体学取向之间的比较揭示了铜和h-BN之间的外延关系，甚至在对称性与h-BN不匹配的Cu（100）和Cu（110）区域上也是如此。然而，生长速率更快，并且岛在Cu（111）晶粒上更均匀地取向。角分辨光电子能谱测量揭示了h-BN的良好定义的能带结构，与6 eV的带隙一致，其与下面的铜表面解耦。这些结果表明，尽管h-BN和铜之间的相互作用较弱，但货车德瓦尔斯外延确定了h-BN的长程有序性，即使在多晶铜箔上也是如此，并表明可以容易且廉价地生产大面积、单晶、单层h-BN。
We investigate the growth of hexagonal boron nitride (h-BN) on copper foil by low pressure chemical vapour deposition (LP-CVD). At low pressure, h-BN growth proceeds through the nucleation and growth of triangular islands. Comparison between the orientation of the islands and the local crystallographic orientation of the polycrystalline copper foil reveals an epitaxial relation between the copper and h-BN, even on Cu(100) and Cu(110) regions whose symmetry is not matched to the h-BN. However, the growth rate is faster and the islands more uniformly oriented on Cu(111) grains. Angle resolved photoemission spectroscopy measurements reveal a well-defined band structure for the h-BN, consistent with a band gap of 6 eV, that is decoupled from the copper surface beneath. These results indicate that, despite a weak interaction between h-BN and copper, van der Waals epitaxy defines the long range ordering of h-BN even on polycrystalline copper foils and suggest that large area, single crystal, monolayer h-BN could be readily and cheaply produced.