Thermal treatment of CdTe surfaces for radiation detectors
Thermal treatment of CdTe surfaces for radiation detectors
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DOI：
10.1016/s0168-9002(96)00295-1
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发表时间：
1996-10-01
影响因子：
1.4
通讯作者：
Ohmori, M
中科院分区：
文献类型：
--
作者：
Ozaki, T;Iwase, Y;Ohmori, M
为了降低In/CdTe/Au辐射探测器的漏电流，在探测器的制作过程中引入了对CdTe晶片的热处理。探测器是由掺氯THM生长的高阻晶片制成的。在In电极沉积之前，在200-300℃的真空蒸发器中进行热处理。采用化学镀的方法制备了金电极。热处理显著降低了漏电流，提高了其稳定性。在(111)B表面形成In电极时，漏电流最小。俄歇电子能谱分析和RHEED观察表明，热处理去除了非晶态的富Te层。当探测器工作在电流模式时，热处理可以显著提高其输出电流的稳定性。
In order to decrease the leakage current of In/CdTe/Au radiation detectors, thermal treatment of the CdTe wafers was introduced into the detector fabrication process. Detectors were fabricated from Cl-doped THM-grown high-resistivity wafers. The thermal treatment was carried out in a vacuum evaporator at 200-300 degrees C before deposition of the In electrode. An Au electrode was formed by electroless plating. The thermal treatment remarkably decreased the leakage current and improved its stability. The lowest leakage current was obtained when an In electrode was formed on the (111)B surface. AES analysis and RHEED observation showed that the thermal treatment removes an amorphous Te-rich layer. The output current stability could be remarkably improved by thermal treatment when the CdTe detector was operated in current mode.