Polycrystalline silicon produced by Ni–silicide mediated crystallization of amorphous silicon in an electric field
Polycrystalline silicon produced by Ni–silicide mediated crystallization of amorphous silicon in an electric field
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电场中镍硅化物介导的非晶硅结晶生产多晶硅
DOI：
10.1063/1.1286064
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发表时间：
2000
影响因子：
3.2
通讯作者：
S. Yoon
中科院分区：
文献类型：
--
作者：
Jin Jang;S. Park;K. Kim;B. Cho;W. Kwak;S. Yoon
本文研究了电场作用下非晶硅（a-Si）的Ni硅化物介导晶化（SMC），Ni面密度为3.3× 10 ~（13）~ 5.7× 10 ~（14）atoms/cm ~ 2。 当Ni面密度在5.1×1013 ~ 2.9×1014 atoms/cm ~ 2之间时，针状晶粒沿垂直于薄膜表面的方向生长，其宽度约为1000 A，长度约为几微米。 当Ni面密度为3.3×1013 atoms/cm ~ 2时，a-Si基体中出现枝晶，但a-Si没有完全晶化。 当多晶硅中Ni的平均体积密度为3.0×1018 atoms/cm ~ 3时，采用SMC多晶硅的薄膜晶体管的场效应迁移率为60-112 cm ~ 2/Vs，并且随着Ni密度的增加而降低。
Crystallization of amorphous silicon (a-Si) by Ni–silicide mediated crystallization (SMC) has been studied in an electric field with Ni area density between 3.3×1013 and 5.7×1014 atoms/cm2 on the a-Si. The needlelike crystallites of ∼1000 A in width and several micron length grow in the 〈111〉 directions with the 〈011〉 normal to the film surface when Ni area density was between 5.1×1013 and 2.9×1014 atoms/cm2. However, dendritic crystallites have been found in the a-Si matrix without complete crystallization of the a-Si when the Ni area density was 3.3×1013 atoms/cm2. The field-effect mobility of the thin-film transistor using the SMC poly-Si was 60–112 cm2/V s when the average Ni bulk density in the poly-Si was around 3.0×1018 atoms/cm3, and it decreases with increasing Ni density.