Metal Complexes for Preparing Ferroelectric Thin Films by Metalorganic Chemical Vapor Deposition
Metal Complexes for Preparing Ferroelectric Thin Films by Metalorganic Chemical Vapor Deposition
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金属有机化学气相沉积制备铁电薄膜的金属配合物
DOI：
10.1143/jjap.31.2992
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发表时间：
1992
影响因子：
1.5
通讯作者：
Yoshiaki Sugimori Yoshiaki Sugimori
中科院分区：
文献类型：
--
作者：
T. Nakai;T. Tabuchi;Yoshinori Sawado;Ichizo Kobayashi Ichizo Kobayashi;Yoshiaki Sugimori Yoshiaki Sugimori
近年来，金属β-二酮配合物被用作金属有机化学气相沉积（MOCVD）制备铁电薄膜的气源。由于我们已经合成了高纯度的金属二特戊酰甲烷（dipivaloyl methanato，CHM）配合物，如Pb（CHM）_2，Sr（CHM）_2和Ba（CHM）_2用于铁电薄膜，我们研究了这些螯合物与沉积薄膜有关的一些性质。并对其挥发性和毒性进行了研究。结果发现，这些螯合化合物具有低蒸气压，但由于低毒性和在较低温度下形成薄膜的可能性而具有易于处理的优点。
Recently, metal β-diketonato complexes have been used as a gas source for preparing ferroelectric thin films by metalorganic chemical vapor deposition (MOCVD). Since we have synthesized highly purified metal dipivaloylmethanato (DPM) complexes such as Pb(DPM)2, Sr(DPM)2 and Ba(DPM)2 for ferroelectric thin films, we have investigated several properties of these chelate compounds related to depositing thin films. Their volatility and toxicity have also been investigated. As a result, it has been found that these chelate compounds have low vapor pressure, but present the advantages of easy handling because of the low toxicity and the possibility of forming thin films at lower temperature.