Magnetoresistance of atomic-scale electromigrated nickel nanocontacts
Magnetoresistance of atomic-scale electromigrated nickel nanocontacts
复制标题
原子级电迁移镍纳米接触的磁阻
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
D. Natelson
中科院分区：
文献类型：
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作者：
Z. Keane;L. H. Yu;D. Natelson
我们报告测量的电子传输通过原子尺度的收缩和铁磁电极之间的隧道结。使用电子束光刻和受控电迁移的组合来制造结构。选择样品几何形状以允许独立控制电极体磁化。当结尺寸减小到单沟道极限时，常规各向异性磁阻（AMR）的大小增加，接近隧道结形成时隧道磁阻（TMR）的预期尺寸。显着的介观变化的磁阻的大小和符号，没有证据表明发现大的弹道磁阻效应。
We report measurements of the electron transport through atomic-scale constrictions and tunnel junctions between ferromagnetic electrodes. Structures are fabricated using a combination of e-beam lithography and controlled electromigration. Sample geometries are chosen to allow independent control of electrode bulk magnetizations. As junction size is decreased to the single channel limit, conventional anisotropic magnetoresistance (AMR) increases in magnitude, approaching the size expected for tunneling magnetoresistance (TMR) upon tunnel junction formation. Significant mesoscopic variations are seen in the magnitude and sign of the magnetoresistance, and no evidence is found of large ballistic magnetoresistance effects.