Effects of transport current and columnar defects on the rf penetration depth of NbSe2.
Effects of transport current and columnar defects on the rf penetration depth of NbSe2.
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输运电流和柱状缺陷对 NbSe2 射频穿透深度的影响。
DOI：
10.1103/physrevb.50.1329
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Budhani
中科院分区：
文献类型：
--
作者：
Chung;Kuo;Xu;Delong;Brill;Budhani
本文报道了超导2[itH]-NbSe[sub2]的直流临界电流和射频穿透深度的同步测量结果。我们观察到直流临界电流的大峰值(峰值效应‘’)出现在与射频穿透深度的极大值相同的外加磁场[ITAL H]([ITAL T])处，表明磁通线动力学中的异常与磁通线钉扎强度的变化有关。在银离子轰击产生高密度柱状缺陷的样品中，临界电流和射频穿透深度的反常消失，超导相变和电荷密度波相变都被这些缺陷大大展宽。
We report on simultaneous measurements of the dc critical current and rf penetration depth of superconducting 2[ital H]-NbSe[sub 2]. We observed that the large peak in the dc critical current (the peak effect'') occurs at the same applied magnetic field [ital H]([ital T]) as a maximum in the rf penetration depth, indicating that the anomaly in flux-line dynamics is associated with a change in flux-line pinning strength. The anomalies in the critical current and rf penetration depth disappear in a sample with a high density of columnar defects produced by Ag-ion bombardment; both superconducting and charge-density-wave phase transitions are substantially broadened by the defects.