Inelastic Electron Backscattering in a Generic Helical Edge Channel
Inelastic Electron Backscattering in a Generic Helical Edge Channel
复制标题
DOI：
10.1103/physrevlett.108.156402
复制
发表时间：
2012-04-11
影响因子：
8.6
通讯作者：
Glazman, Leonid I.
中科院分区：
文献类型：
--
作者：
Schmidt, Thomas L.;Rachel, Stephan;Glazman, Leonid I.
本文计算了无轴向自旋对称的一维螺旋液体的低温电导。这种对称性的缺乏使得单个电子的非弹性后向散射，伴随着另一个电子的前向散射。这种弱相互作用和杂质散射的联合效应导致量子化电导的温度依赖性偏差，Δ G与T-4成比例。此外，Δ G对费米能级的位置敏感。我们确定数值参数进入我们的通用模型的Bernevig-Hughes-Zhang哈密顿的碲化镉量子阱中存在的Rashba自旋轨道耦合。
We evaluate the low-temperature conductance of a weakly interacting one-dimensional helical liquid without axial spin symmetry. The lack of that symmetry allows for inelastic backscattering of a single electron, accompanied by forward scattering of another. This joint effect of weak interactions and potential scattering off impurities results in a temperature-dependent deviation from the quantized conductance, delta G proportional to T-4. In addition, delta G is sensitive to the position of the Fermi level. We determine numerically the parameters entering our generic model for the Bernevig-Hughes-Zhang Hamiltonian of a HgTe/CdTe quantum well in the presence of Rashba spin-orbit coupling.