Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages
Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages
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使用传统 FDSOI CMOS 在低偏置电压下实现超陡亚阈值斜率
DOI：
10.1109/iedm.2010.5703377
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
M. Jurczak
中科院分区：
文献类型：
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作者：
Z. Lu;N. Collaert;M. Aoulaiche;B. de Wachter;A. De Keersgieter;J. Fossum;L. Altimime;M. Jurczak
我们报告了使用超薄 BOX (UTBOX) FDSOI 标准 CMOS 晶体管的超陡亚阈值斜率 (SS)（有史以来实验报告中最小的）的首次演示。在室温下，L<inf>g</inf>=25nm 时的陡峭 SS 为 72μV/dec，L<inf>g</inf>=55nm 时的陡峭 SS 是在低电压下实现的。与同类其他器件相比，该器件还具有高导通状态电流 (∼100μA/μm)。因此，L<inf>g</inf>=55nm MOSFET 的 I<inf>ON</inf>/I<inf>OFF</inf> 比率可通过 0.5V 栅极摆幅实现 10<sup>8</sup>。还展现了卓越的可靠性。
We report the first demonstration of a super-steep subthreshold slope (SS) (the smallest ever reported experimentally) with ultra-thin BOX (UTBOX) FDSOI standard CMOS transistors. Record steep SS of 72µV/dec for L<inf>g</inf>=25nm and 58µV/dec for L<inf>g</inf>=55nm at room temperature are achieved with low voltages. The device also exhibits high ON-state current (∼100µA/µm), as compared to other devices from this class. As a result, I<inf>ON</inf>/I<inf>OFF</inf> ratio of 10<sup>8</sup> is realized with 0.5V gate swing for L<inf>g</inf>=55nm MOSFETs. The excellent reliability is also demonstrated.