Magnetoelectric oxide films for spin manipulation in graphene
Magnetoelectric oxide films for spin manipulation in graphene
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用于石墨烯自旋操纵的磁电氧化物薄膜
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
D. Dougherty
中科院分区：
文献类型：
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作者：
S. Stuart;B. Gray;D. Nevola;L. Su;E. Sachet;M. Ulrich;D. Dougherty
制造石墨烯自旋场效应晶体管（自旋场效应晶体管）的挑战需要一种磁化强度可以电开关的磁栅介电材料。我们已经通过脉冲激光沉积在石墨和石墨烯上生长了Cr2O3薄膜，显示了这一关键功能。通过在电场和磁场联合作用下对Cr2O3薄膜进行极化，并利用磁力显微镜观察其自发表面畴结构随极化场的变化，证明了Cr2O3薄膜具有磁电性。此外，我们证明了导电AFM尖端产生的电场可用于在薄膜中写入磁性图案，这证明了自旋场效应管原型所需的连续磁电控制。（©2016 WILEY‐VCH Verlag GmbH &Co.）这之前,Weinheim)
The challenge of creating a graphene spin field effect transistor (spin‐FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr2O3 on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr2O3 films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin‐FET. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)