Si(100)-(2x1) etching with fluorine: Planar removal versus three dimensional fitting
Si(100)-(2x1) etching with fluorine: Planar removal versus three dimensional fitting
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DOI：
10.1103/physrevlett.83.3210
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发表时间：
1999-10-18
影响因子：
8.6
通讯作者：
Weaver, JH
中科院分区：
文献类型：
--
作者：
Nakayama, KS;Weaver, JH
用扫描隧道显微镜研究了吸附F与Si（100）-（2 × 1）热活化反应的形貌。二聚体空位产生在顶层，但更重要的是，有一个新的反应途径，引起多层点蚀，即使当表面浓度很低。该途径可以与暴露层的原子结构和该层中SiF 2的形成相关联。它可以解释表面粗糙化，并且非常有效。
The morphologies achieved by thermally activated reactions of adsorbed F with Si(100)-(2 X 1) were studied with scanning tunneling microscopy. Dimer vacancies were produced in the top layer but, more significantly, there was a new reaction pathway that gave rise to multilayer pitting even when the surface concentration was very low. This pathway can be linked to the atomic structure of the exposed layer and the formation of SiF2 in that layer. It accounts for surface roughening, and it is very effective.