Effect of annealing on the superconducting properties of a-NbxSi1-x thin films
Effect of annealing on the superconducting properties of a-NbxSi1-x thin films
复制标题
DOI：
10.1103/physrevb.87.144514
复制
发表时间：
2013-04-23
影响因子：
3.7
通讯作者：
Dumoulin, L.
中科院分区：
文献类型：
--
作者：
Crauste, O.;Gentils, A.;Dumoulin, L.
a-NbxSi（1-x）薄膜的厚度可达25埃，其结构由透射电子显微镜测量表征。沉积或退火的薄膜被证明是连续和均匀的组成和厚度，高达500摄氏度的退火温度。我们已经进行了低温运输测量这些薄膜接近超导体到绝缘体的转变（SIT），并显示出退火或组合物和减少的膜厚度的a-NbSi的超导性能的影响之间的质的差异。这些结果质疑薄层电阻R平方作为描述SIT的相关参数的相关性。DOI：10.1103/PhysRevB.87.144514
a-NbxSi1-x thin films with thicknesses down to 25 angstrom have been structurally characterized by transmission electron microscopy measurements. As-deposited or annealed films are shown to be continuous and homogeneous in composition and thickness, up to an annealing temperature of 500 degrees C. We have carried out low-temperature transport measurements on these films close to the superconductor-to-insulator transition (SIT) and shown a qualitative difference between the effect of annealing or composition and a reduction of the film thickness on the superconducting properties of a-NbSi. These results question the pertinence of the sheet resistance R-square as the relevant parameter to describe the SIT. DOI: 10.1103/PhysRevB.87.144514