Photoreflectance study of phosphorus passivation of GaAs (001)
Photoreflectance study of phosphorus passivation of GaAs (001)
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GaAs(001)磷钝化的光反射研究
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
P. Yeo
中科院分区：
文献类型：
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作者：
R. Beaudry;S. Watkins;X. Xu;P. Yeo
我们利用光反射光谱研究了磷钝化对未掺杂GaAs表面电场的影响。表面电场测定表面/内在/n型（S-I-N+）样品制备与各种表面磷处理。与H2S钝化膜和InGaP覆盖层原位制备在相同的生长设备的比较。磷表面钝化是通过（1）在叔丁基膦蒸气下GaAs表面的交换反应或（2）直接生长GaP薄外延层来实现的。磷的总覆盖率已通过X射线衍射技术估计。我们观察到一个最大的减少，表面费米能级使用外延生长的GaP与两个单层的有效覆盖。所有钝化处理的原子力显微镜图像表现出优异的表面形貌，而不粗糙化。随着时间的推移，钝化效果有所下降，但费米能级和密度的减少…
We present a study of the effect of phosphorus passivation on the surface electric field of undoped GaAs using photoreflectance spectroscopy. Surface electric fields were determined in surface/intrinsic/n-type (s-i-n+) samples prepared with various surface phosphorus treatments. A comparison with H2S passivated films and InGaP capped layers prepared in situ in the same growth equipment is also presented. Phosphorus surface passivation was achieved by (1) exchange reaction of the GaAs surface under tertiarybutylphosphine vapor or (2) direct growth of GaP thin epitaxial layers. The total coverage of phosphorus has been estimated by x-ray diffraction techniques. We observe a maximum reduction of the surface Fermi level using epitaxially grown GaP with an effective coverage of two monolayers. Atomic force microscopy images of all passivation treatments exhibit excellent surface morphology without roughening. The passivation effects decreased somewhat over time but reductions in the Fermi level and density of ...