Effects of metallic impurities on anisotropic etching of silicon in aqueous KOH-solutions
Effects of metallic impurities on anisotropic etching of silicon in aqueous KOH-solutions
复制标题
金属杂质对 KOH 水溶液中硅各向异性蚀刻的影响
DOI：
10.1109/sensor.1997.613745
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
E. Obermeier
中科院分区：
文献类型：
--
作者：
A. Hein;O. Dorsch;E. Obermeier
研究了溶解在 KOH 水溶液中的金属杂质对硅各向异性蚀刻的各种影响。给出了{100}和{111}面的各向异性、表面粗糙度以及凸角形状的变化。铁、钠、铬、铝和锌等金属导致蚀刻各向异性增加，而铜和镍则导致蚀刻各向异性减少。观察到的表面粗糙度随着杂质含量的增加而强烈增加。在金属杂质含量较低时，凸角的角度具有接近150/spl度/的值。然而，随着金属离子含量的增加，该值下降至 143/spl deg/。
Various effects of metallic impurities dissolved in aqueous KOH solutions on the anisotropic etching of silicon are investigated. The changes of the anisotropy, surface roughness of {100} and {111} planes and the shape of convex corners are presented. Metals such as iron, sodium, chromium, aluminum and zinc cause an increase, and copper and nickel a decrease in the etch anisotropy. The observed surface roughness increases strongly with impurity content. At lower contents of metallic impurities the angle of the convex corners have a value near 150/spl deg/. However, with rising metallic ion content the value goes down to 143/spl deg/.