Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target
Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target
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工作压力对氧化物靶材溅射氧化钨薄膜物理性能的影响
DOI：
10.1116/1.3333423
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
P. Bartolo
中科院分区：
文献类型：
--
作者：
I. Riech;M. Acosta;J. L. Pena;P. Bartolo
通过非反应射频溅射，将金属氧化物靶材上的氧化钨薄膜沉积在玻璃基板上。作者研究了改变氩气压力对薄膜中电学、光学和化学成分的影响。当工作气体压力值从 20 到 80 mTorr 时，WO3 的电阻率发生十个数量级的变化。在 20 mTorr Ar 溅射压力下沉积的薄膜表现出较低的电阻率和光学透射率。 X 射线光电子能谱 (XPS) 测量显示，无论使用何种 Ar 压力，所有样品的化学成分相似。然而，W 4f 和 O 1s 峰演变的 XPS 分析表明氧化物混合物取决于沉积过程中使用的 Ar 压力。
Tungsten-oxide films were deposited on glass substrates from a metal-oxide target by nonreactive radio-frequency sputtering. The authors have studied the effect that changing Ar gas pressure has on the electrical, optical, and chemical composition in the thin films. Resistivity of WO3 changed ten orders of magnitude with working gas pressure values from 20 to 80 mTorr. Thin films deposited at 20 mTorr of Ar sputtering pressure showed lower resistivity and optical transmittance. X-ray photoelectron spectroscopy (XPS) measurements revealed similar chemical composition for all samples irrespective of Ar pressure used. However, XPS analyses of the evolution of W 4f and O 1s peaks indicated a mixture of oxides dependent on the Ar pressure used during deposition.