Seed layer enhancement by electrochemical deposition: The copper seed solution for beyond 45 nm
Seed layer enhancement by electrochemical deposition: The copper seed solution for beyond 45 nm
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DOI：
10.1016/j.mee.2007.06.014
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发表时间：
2007-11-01
影响因子：
2.3
通讯作者：
Passemard, G.
中科院分区：
文献类型：
--
作者：
Roule, A.;Amuntencei, M.;Passemard, G.
随着特征尺寸的缩小，金属化堆叠的每一层必须变得越来越薄以符合几何约束。特别地，对于45 nm节点和更高节点，种子层厚度将必须大幅减小。由于PVD是一种非保形技术，因此可以预期窄特征的侧壁的不连续播种。在这项研究中，种子层增强（SLE）过程中进行了评估300毫米。处理，作为一个可能的解决方案，为45纳米节点及以下的铜播种。我们证明了这个过程的可扩展性，以制造300毫米晶圆。我们证实了存款，这是非常保形，因此连续的内部功能的优良形态特性。该工艺成功地集成到现有的金属化工序中，而无需对后续步骤（包括电镀）进行任何修改。该演示得到了电气结果的支持，表明10 nm厚的PVD衬垫（导致线路和过孔电阻严重退化）仅用20 nm就能有效修复。SLE。所有电气性能（线路和通孔电阻、色散和成品率）都在SLE步骤的实施中完全恢复。(c)2007 Elsevier B.V.保留所有权利。
With the downscaling of feature dimensions, each layer of the metallization stack has to become thinner and thinner to comply with the geometrical constraints. In particular, seed layer thickness will have to be drastically reduced for the 45 nm node and beyond. As PVD is a non-conformal technique, discontinuous seeding of the sidewalls of narrow features can be expected. In this study, a seed layer enhancement (SLE) process is evaluated for 300 mm. processing, as a possible solution for copper seeding for the 45 nm node and below. We demonstrate the extendibility of this process to the fabrication of 300 mm wafers. We confirm the excellent morphological properties of the deposit, which is extremely conformal, thus continuous inside the features. This process is successfully integrated in the existing metallization sequence, without any modification of the subsequent steps, including electroplating. This demonstration is supported by electrical results, showing that a 10 nm thick PVD liner, which leads to severe degradation of line and via resistance, is efficiently repaired with only 20 nm. SLE. All electrical performances (line and via resistance, dispersion and yield) are fully recovered with implementation of the SLE step. (c) 2007 Elsevier B.V. All rights reserved.