AlGaInP-sapphire glue bonded light-emitting diodes
AlGaInP-sapphire glue bonded light-emitting diodes
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AlGaInP-蓝宝石胶粘发光二极管
DOI：
10.1109/jqe.2002.802970
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发表时间：
2002
影响因子：
2.5
通讯作者：
K. Huang
中科院分区：
文献类型：
--
作者：
S. Chang;Y. Su;T. Yang;C. S. Chang;Tzer;K. Huang
提出了一种在透明蓝宝石衬底上粘贴AlGaInP GaAs发光二极管（LED）的新方法。随后通过选择性湿法蚀刻去除吸收的GaAs。结果表明，在20 mA电流注入下，622 nm胶接AlGaInP-蓝宝石LED的发光效率可达401 m/W。还发现，这些GB LED是高度可靠的，在寿命测试期间工作电压和发光强度的变化很小。
A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.