Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices
Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices
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DOI：
10.1109/led.2015.2457243
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发表时间：
2015-09-01
影响因子：
4.9
通讯作者：
Bhaskaran, Harish
中科院分区：
文献类型：
--
作者：
Hosseini, Peiman;Sebastian, Abu;Bhaskaran, Harish
相变材料和器件作为实现各种非常规计算范例的潜在途径受到了极大的关注。在这封信中，我们提出了利用相变存储器(PCM)单元的累加特性的非von Neumann算术处理。使用集成FET访问器件的PCM单元，我们对基于累加的计算进行了详细的研究。我们还演示了使用PCM单元的高效因式分解，这是一种可以为大规模并行计算铺平道路的技术。
Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.