Dilute nitride vertical-cavity surface-emitting lasers
Dilute nitride vertical-cavity surface-emitting lasers
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稀氮化物垂直腔面发射激光器
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
M. Pessa
中科院分区：
文献类型：
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作者：
T. Jouhti;O. Okhotnikov;J. Konttinen;L. Gomes;C. Peng;S. Karirinne;E. Pavelescu;M. Pessa
一种新型四元化合物半导体材料Ga1−xInxNyAs1−y(0 < x, y < 1)，已成功用于演示1280 nm发射的光泵浦连续波垂直腔表面发射激光器。每个激光晶片的外延异质结构是使用氮射频等离子体源通过传统分子束外延在单成核过程中生长的。激光器由 GaAs/AlAs 分布布拉格反射镜和 6 或 15 个具有特殊应变中介层的 Ga0.65In0.35N0.014As0.986/GaAs 量子阱组成。激光表征是通过使用光纤尾纤 980 nm 泵浦激光二极管、980/1300 nm 波分复用器和光谱分析仪进行的。 3.5 mW 的高光输出功率无透镜耦合到标准单模光纤中。
A novel quaternary compound semiconductor material, Ga1 − xInxNyAs1 − y(0 < x, y < 1), was successfully used in demonstrating optically pumped continuous-wave vertical-cavity surface-emitting lasers emitting at 1280 nm. The epitaxial heterostructures of each laser wafer were grown in a single nucleation process by conventional molecular beam epitaxy using a nitrogen radio-frequency plasma source. The lasers consist of GaAs/AlAs distributed Bragg reflector mirrors and 6 or 15 Ga0.65In0.35N0.014As0.986/GaAs quantum wells with special strain-mediating layers. The laser characterization was carried out by using a fibre pigtailed 980 nm pump laser diode, 980/1300 nm wavelength division multiplexer and an optical spectrum analyser. A high optical output power of 3.5 mW was coupled lenslessly into a standard single-mode fibre.