Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation
Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation
复制标题
通过横向应变弛豫制造的不对称应变绝缘体上 InGaAs 金属氧化物半导体场效应晶体管中电子迁移率的物理理解
DOI：
10.1063/1.4869221
复制
发表时间：
2014
影响因子：
4
通讯作者：
M. Takenaka and S. Takagi
中科院分区：
文献类型：
--
作者：
S. H. Kim;M. Yokoyama;N. Taoka;R. Nakane;T. Yasuda;H. Yamada;N. Fukuhara;M. Hata;M. Takenaka and S. Takagi
