Annealing temperature dependence of TC of thin‐film Gd grown on a glass substrate
Annealing temperature dependence of TC of thin‐film Gd grown on a glass substrate
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DOI：
10.1063/1.341398
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发表时间：
1988-10
影响因子：
3.2
通讯作者：
O. Nakamura;K. Baba;H. Ishii;T. Takeda
中科院分区：
文献类型：
--
作者：
O. Nakamura;K. Baba;H. Ishii;T. Takeda
用溅射技术在玻璃衬底上生长Gd薄膜。对沉积后在不同温度下退火的不同样品进行X射线衍射、磁化和电阻测量。沉积的薄膜是具有择优取向的hcp结构的多晶，（100）面平行于样品表面。这些薄膜的居里温度TC的估计值在273和293 K之间变化，这取决于退火温度。结果表明，这种变化与晶格缺陷的弛豫有关。
Thin films of Gd were grown on a glass substrate with a sputtering technique. Measurements of x‐ray diffraction, magnetization, and electrical resistance were carried out for different samples that were annealed at various temperatures after the deposition. The deposited films are polycrystalline of hcp structure with preferred orientation, with the (100) plane parallel to the sample surface. The estimated Curie temperature TC of these films changes between 273 and 293 K, depending on the annealing temperature. It is found that this variation of TC is correlated with the relaxation of lattice imperfections.