Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors
Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors
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DOI：
10.1103/physrevlett.100.206803
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发表时间：
2008-05-23
影响因子：
8.6
通讯作者：
Dai, Hongjie
中科院分区：
文献类型：
--
作者：
Wang, Xinran;Ouyang, Yijian;Dai, Hongjie
对10 nm以下的石墨烯纳米带场效应晶体管（gnrfet）进行了系统的研究。所有的亚10纳米gnr都提供了半导体场效应管，其I-on/I-off比高达10(6)，导通电流密度高达2000 μ A/ μ m。我们估计在亚10纳米gnr中载流子迁移率接近200 cm(2)/V s，散射平均自由程接近10 nm。讨论了边缘、声子和缺陷的散射机制。10 nm以下的gnrfet与直径较小的(d
Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with I-on/I-off ratio up to 10(6) and on-state current density as high as similar to 2000 mu A/mu m. We estimated carrier mobility similar to 200 cm(2)/V s and scattering mean free path similar to 10 nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter (d