Erbium-Doped Waveguide Laser in Tantalum Pentoxide
Erbium-Doped Waveguide Laser in Tantalum Pentoxide
复制标题
五氧化二钽掺铒波导激光器
DOI：
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发表时间：
2010
影响因子：
2.6
通讯作者：
J. Wilkinson
中科院分区：
文献类型：
--
作者：
A. Subramanian;C. Oton;D. Shepherd;J. Wilkinson
Tantalum pentoxide (Ta<sub>2</sub>O<sub>5</sub>) is a promising high index material for dense photonic circuits, with the incorporation of gain substantially increasing its potential functionality. Diode-pumped laser action is demonstrated in 2.3-cm-long Ta<sub>2</sub>O<sub>5</sub> rib waveguides doped with 2.7 10<sup>20</sup> erbium ions/cm<sup>3</sup>, which were fabricated by magnetron sputtering on an oxidized silicon wafer. Lasing was observed at wavelengths between 1558 and 1562 nm with a launched diode pump power threshold of 14 mW.
