Fabrication and characteristics of submicron tunneling junctions on high Tc superconducting c-axis thin films and single crystals
Fabrication and characteristics of submicron tunneling junctions on high Tc superconducting c-axis thin films and single crystals
复制标题
高温超导c轴薄膜和单晶亚微米隧道结的制备及特性
DOI：
10.1063/1.1361267
复制
发表时间：
2001
影响因子：
3.2
通讯作者：
T. Yamashita
中科院分区：
文献类型：
--
作者：
S. Kim;T. Yamashita
我们报道了使用800 nm厚的c轴YBa 2Cu 3 O 7 −y（YBCO）薄膜和Bi 2Sr 2CaCu 2 O 8 +δ（Bi-2212）单晶晶须成功制备亚微米尺寸隧道结及其特性。使用三维聚焦离子束蚀刻方法的结。首先，通过法线方向蚀刻以所需的结宽度图案化微桥。通过将样品台倾斜高达90°，从横向蚀刻桥上的两个凹槽，以创建所需的结尺寸。60 K的YBCO结在面内面积小于0.5 μm2时，临界电流密度（Jc）没有下降，并表现出从零电压态到阻性态的集体开关转变的电流-电压（I-V）特性。对于小于1 μm2的Bi-2212堆，我们确定了充电效应对I-V特性的一些特征。
We report successful fabrication and characteristics of submicron-size tunneling junctions using c-axis YBa2Cu3O7−y (YBCO) thin films of 800 nm thickness and Bi2Sr2CaCu2O8+δ(Bi-2212) single-crystal whiskers. The junctions were made using a three-dimensional focused-ion-beam etching method. First, a microbridge was patterned in a required junction width by normal direction etching. By tilting the sample stage up to 90°, two grooves on the bridge were etched from the lateral direction in order to create the required junction size. The 60 K YBCO junctions did not show any degradation of critical current density (Jc) down to an in-plane area of 0.5 μm2 and showed current–voltage (I–V) characteristics of the collective switching transition from the zero voltage state to the resistive state. For Bi-2212 stacks smaller than 1 μm2, we identified some of the features of charging effects on the I–V characteristics.