Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi2Se3 films
Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi2Se3 films
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DOI：
10.1016/j.jssc.2023.124315
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发表时间：
2023-09
影响因子：
3.3
通讯作者：
Mingze Li;Zhenhua Wang;Xudong Shi;Tingting Li;Xuan P.A. Gao;Zhidong Zhang
中科院分区：
文献类型：
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作者：
Mingze Li;Zhenhua Wang;Xudong Shi;Tingting Li;Xuan P.A. Gao;Zhidong Zhang
我们报道了化学气相沉积法制备的垂直铜掺杂 Bi2Se3 纳米板薄膜的电学和磁学输运行为。在垂直掺杂铜的 Bi2Se3 纳米板薄膜中，拓扑表面态通过大表面与体积比和铜掺杂来调节。由于其高比表面积，垂直未掺杂Bi2Se3纳米片薄膜的磁阻表现出微弱的反局域化效应，这表明拓扑表面态性质大大增强。在垂直Cu掺杂的Bi2Se3纳米板薄膜中，电子掺杂受到抑制，载流子类型从n型变为p型。观察到的线性磁阻归因于拓扑表面态的量子起源。当垂直 Bi2Se3 纳米板薄膜中的 Cu 浓度达到 1.73 at.% 时，线性磁阻可以保持高达 100 K。同时，这些垂直纳米板薄膜表现出 3D 磁输运特性。因此，使用具有广泛载流子密度和类型的相同材料系统，我们的工作展示了纳米结构拓扑绝缘体 Bi2Se3 薄膜从弱反局域化到线性磁阻的转变，该薄膜具有不寻常的形态，其中纳米板垂直排列以增加表面积。
We report the electrical and magnetic transport behavior in vertical Cu-doped Bi2Se3nanoplate films prepared by the chemical vapor deposition method. In vertical Cu-doped Bi2Se3nanoplate films, the topological surface states are tuned by both the large surface-to-bulk ratio and the Cu doping. Due to their high specific surface area, the magnetoresistance of the vertical undoped Bi2Se3nanoplate film exhibits a weak antilocalization effect, and it indicates that the topological surface state properties are greatly enhanced. In vertical Cu-doped Bi2Se3nanoplate films, the electron doping is inhibited, and the carrier type is changed from n-type to p-type. The observed linear magnetoresistance is attributed to have a quantum origin from the topological surface states. When the Cu concentration reaches 1.73 at.% in vertical Bi2Se3nanoplate film, the linear magnetoresistance can be maintained up to 100 K. Meanwhile, these vertical nanoplate films exhibit the 3D magnetotransport property. Thus, using the same material system with a broad range of carrier density and type, our work shows the transition from a weak-antilocalization to linear magnetoresistance in nanostructured topological insulator Bi2Se3films with an unusual morphology where the nanoplates are vertically aligned to increase the surface area.