On the unoccupied electronic states of vanadium diselenide
On the unoccupied electronic states of vanadium diselenide
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二硒化钒的未占电子态
DOI：
10.1088/0953-8984/3/7/006
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
H. Hughes
中科院分区：
文献类型：
--
作者：
A. Law;P. T. Andrews;H. Hughes
使用等色仪动量分辨逆光电发射，测量了 Vb 族过渡金属二硫属化物化合物二硒化钒的未占据电子态，该电子态比费米能级高出约 10 eV。通过记录 17 至 28 eV 之间光子能量的法向入射光谱来探测沿布里渊区 Gamma A 方向的能带。布里渊区两个主对称面（Gamma ALM 和 Gamma AHK）中的能带色散是根据在 20 eV 光子能量下记录的非法向入射光谱确定的。在费米能级以上约 1 eV 和约 3 eV 处可以看到由跃迁到未占据的 V 3d 衍生能带所产生的强烈特征；这些特征的强度随电子入射方位角的变化反映了VSe2采用的1T晶体结构的三重对称性。以约 8 eV 为中心并显示在约 6 eV 处开始的广泛特征与较高位置的 s/p 带相关，而约 5 eV 处的弱峰（显示沿 Gamma A 没有色散）暂时被识别为表面共振。结果与已发表的能带结构计算结果进行了比较。
The unoccupied electronic states of the group Vb transition metal dichalcogenide compound vanadium diselenide have been measured up to about 10 eV above the Fermi level using isochromat momentum-resolved inverse photoemission. Bands along the Gamma A direction of the Brillouin zone were probed by recording normal-incidence spectra at photon energies between 17 and 28 eV. Band dispersions in the two principal symmetry planes of the Brillouin zone, Gamma ALM and Gamma AHK, were determined from off-normal-incidence spectra recorded at a photon energy of 20 eV. Strong features resulting from transitions into the unoccupied V 3d-derived bands are seen at about 1 eV and about 3 eV above the Fermi level; the variation of the intensity of these features with the azimuthal angle of electron incidence reflects the three-fold symmetry of the 1T crystal structure adopted by VSe2. A broad feature centred at about 8 eV, and showing an onset at about 6 eV, is associated with higher-lying s/p bands while a weak peak at about 5 eV, which shows no dispersion along Gamma A, is tentatively identified as a surface resonance. The results are compared with published band-structure calculations.