TEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon
TEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon
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DOI：
10.4028/www.scientific.net/ssp.178-179.307
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发表时间：
2011-08
期刊：
影响因子：
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通讯作者：
M. Kivambe;G. Stokkan;T. Ervik;B. Ryningen;O. Lohne
中科院分区：
文献类型：
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作者：
M. Kivambe;G. Stokkan;T. Ervik;B. Ryningen;O. Lohne
已知如果晶格位错通过恢复过程重新排列成阵列形成亚晶界，则晶体实现较低的能量。边界位错与滑动位错的相互作用也有望实现局部平衡。在这项工作中，位错局部化在附近的亚晶界（错误取向）进行了详细的研究，通过透射电子显微镜，以确定其来源。与上述过程相反，亚晶界似乎是这些位错的来源，这些位错是从边界的某些局部应力部分发射出来的。沿晶界沿着激活了多个滑移系，形成高密度位错。此外，似乎来自一个或多个源的位错传播被与其他位错或其他缺陷的相互作用中断。来自不同来源的位错会相互碰撞堆积，导致位错在亚晶界附近局部化
A crystal is known to achieve lower energy if lattice dislocations are re-arranged in arrays forming a sub-grain boundary through a recovery process. Interaction of boundary dislocations with glide dislocations is also expected to bring about local equilibrium. In this work, dislocations localised in the vicinity of a sub-grain boundary (mis-orientation ) are studied in detail by transmission electron microscopy in order to determine their source. Contrary to the processes described above, it appears that the sub-grain boundary is the source of these dislocations, which are emitted from some locally stressed parts of the boundary. Several slip systems have been activated along the boundary resulting in high density of dislocations. It appears, further, that dislocation propagation from one or more sources is disrupted by interaction with other dislocations or other defects. The dislocations from various sources will be piled up against the obstacles of the other, resulting in the localization of the dislocations close to the sub-grain boundary