Electron paramagnetic resonance properties ofn-type silicon in the intermediate impurity-concentration range
Electron paramagnetic resonance properties ofn-type silicon in the intermediate impurity-concentration range
复制标题
n型硅在中间杂质浓度范围内的电子顺磁共振特性
DOI：
10.1103/physrevb.11.4184
复制
发表时间：
1975
影响因子：
3.7
通讯作者：
J. Marko
中科院分区：
文献类型：
--
作者：
P. Cullis;J. Marko
注意到的BCL，BCL参数表现出的温度依赖性，这是从相应的hyper6ne线量观察到的不同。分数自旋磁化率与BCL和渗滤计算的结果的比较表明，BCL可以归因于三个或更多的相互作用的施主原子的集群。证据也提出了一个超精细线自旋晶格弛豫过程，通过交叉弛豫与快速弛豫集群（BCL）中心。这个过程被证明是一致的BCL和超精细弛豫速率的实验温度依赖性。
are noted for the BCL, the BCL parameters exhibit temperature dependences which are distinct from those observed for the corresponding hyper6ne-line quantities. A comparison of the fractional spin susceptibility associated with the BCL and the results of a percolation calculation indicates that the BCL can be attributed to clusters of three or more interacting donor atoms. Evidence is also presented for a hyperfine-line spin-lattice relaxation process which proceeds through cross relaxation with fast relaxing cluster (BCL) centers. This process is shown to be consistent with the experimental temperature dependences of the BCL and hyperfine relaxation rates.