Applications of Direct-Current Current-Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions
Applications of Direct-Current Current-Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions
复制标题
直流电流-电压法在不同工艺条件下 SOI NMOSFET 总电离剂量辐射表征中的应用
DOI:
10.3390/electronics10070858
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发表时间:
2021
期刊:
影响因子:
2.9
通讯作者:
Luo Jiajun
中科院分区:
文献类型:
--
作者:
Li Yangyang;Zeng Chuanbin;Li Xiaojing;Gao Linchun;Yan Weiwei;Li Duoli;Zhang Yi;Han Zhengsheng;Luo Jiajun