Photoluminescence properties of Cu-poor Cu2Sn1-xGexS3 thin films with varying Ge/(Ge+Sn) ratio
Photoluminescence properties of Cu-poor Cu2Sn1-xGexS3 thin films with varying Ge/(Ge+Sn) ratio
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不同Ge/(Ge Sn)比的贫铜Cu2Sn1-xGexS3薄膜的光致发光特性
DOI：
10.1088/1361-6463/accc42
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Kunihiko Tanaka
中科院分区：
文献类型：
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作者：
Ayaka Kanai;Ryoma Hata;Mutsumi Sugiyama;Kunihiko Tanaka
本研究通过低温-PL测量，研究了目前最适合高效吸收剂的cu2 Sn 1−x Ge x s3 （CTGS）薄膜的光致发光（PL）光谱，揭示了x比对CTGS薄膜缺陷性能的影响。当x= 0.00时，CTS薄膜的PL光谱在0.782、0.832、0.862、0.885和0.933 eV处出现5个峰。此外，随着x比的增加，CTGS薄膜中的所有PL峰位置都向更高的能量移动，这是因为薄膜中的缺陷水平随着x比的增加而变化。此外，我们还得到了x= 0.00时CTS薄膜在6 ~ 20 meV范围内的估计活化能（ea）值。CTGS薄膜的E - a值与CTGS薄膜相似，即使在x比高达0.19时也是如此。CTGS薄膜中x比的增加不影响CTGS中的受体。因此，作为太阳能电池中的吸收层，CTGS比CTS更有优势，因为石墨烯可以在保持浅层受体的同时很大。因此，CTGS可以像CuIn 1−x Ga x Se 2和cu2 ZnSnS 4一样被越来越多地用作下一代吸收材料。
This study investigates the photoluminescence (PL) spectra of Cu 2 Sn 1− x Ge x S 3 (CTGS) thin films, which are currently the most suitable composition ratio for high-efficiency absorbers through low temperature-PL measurements to reveal the effects of the x ratio on defect properties of CTGS thin films. The PL spectrum of Cu 2 SnS 3 (CTS) thin films with x= 0.00 exhibits five peaks at 0.782, 0.832, 0.862, 0.885, and 0.933 eV. Moreover, all PL peak positions in the CTGS thin films shift to higher energies with increasing x ratios because the defect levels in the films changed with an increase in the x ratio. Moreover, we obtain the estimated activation energy (E a) values of the CTS thin films with x= 0.00 ranging from 6 to 20 meV. The E a values of CTGS are similar to those of the CTGS thin films, even at x ratios of up to 0.19 in CTGS thin films. The increasing x ratio in CTGS thin films does not influence the acceptor in CTGS. Therefore, the CTGS is advantageous as an absorption layer in solar cells rather than a CTS because E g can be large while maintaining a shallow acceptor. Hence, CTGS can be expected to be increasingly used like CuIn 1− x Ga x Se 2 and Cu 2 ZnSnS 4 as next-generation absorption materials.