Impurity photovoltaic effect in c-Si solar cells. A numerical study
Impurity photovoltaic effect in c-Si solar cells. A numerical study
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DOI：
10.1063/1.369528
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发表时间：
1999-02
影响因子：
3.2
通讯作者：
M. Schmeits;A. A. Mani-A.
中科院分区：
文献类型：
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作者：
M. Schmeits;A. A. Mani-A.
本文对晶体硅p-n结太阳电池中的杂质光伏效应进行了数值研究。应用程序是在杂质的能级是在0.157 eV以上的价带边缘。对泊松方程和电子、空穴、缺陷能级的连续性方程进行数值求解，得到了不同杂质浓度Nt时的电流-电压曲线，由此得到短路电流密度Jsc、开路电压Voc和能量转换效率η。结果表明，随着缺陷浓度Nt相对于背景施主浓度的增大，Jsc增大，Voc和η减小.在p-n-n+结构中的修改的缺陷浓度分布被建议从IPV效应中提取最大益处。
A numerical study is made of the impurity photovoltaic (IPV) effect in crystalline Si p-n junction solar cells. Application is made to In impurities whose energy level is at 0.157 eV above the valence band edge. The numerical resolution of Poisson’s equation and the continuity equations for electrons, holes and defect levels yields the current–voltage curves for different impurity concentrations Nt, from which the short-circuit current density Jsc, the open-circuit voltage Voc, and the energy conversion efficiency η is obtained. It is shown that increasing the defect concentration Nt with respect to the background donor concentration leads to an increase of Jsc but decreases Voc and η. A modified defect concentration profile in a p-n-n+ structure is suggested to extract the maximum benefit from the IPV effect.