Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films
Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films
复制标题
BiFeO3 和 Bi0.8Ca0.2FeO3 薄膜中单极和双极电阻开关的共存
DOI：
10.1063/1.4716867
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发表时间：
2012-05-15
影响因子：
3.2
通讯作者：
Liu, Zhiguo
中科院分区：
文献类型：
--
作者：
Liu, Lu;Zhang, Shantao;Liu, Zhiguo
制备了铁电BiFeO 3和顺电Bi0.8Ca0.2FeO3多晶薄膜，研究了缺陷密度对电阻开关的影响。随着缺陷密度和相应漏电流的增加，电流-电压回路允许四种不同类型，即，重叠、无记忆效应的滞后、双极电阻开关和单极电阻开关。当电铸过程中引入足够多的带电缺陷，电阻值单调增加到一定值时，前三种类型可以转化为后一种类型。单极性电阻开关属于导电型电阻开关，可视为一种特殊的电铸工艺。此外，其高阻状态允许第二或第三类型处于低电压区。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4716867]
Ferroelectric BiFeO3 and paraelectric Bi0.8Ca0.2FeO3 polycrystalline films were prepared to study the dependence of resistive switch on defect density. With defect density and the corresponding leakage current increasing, current-voltage loops allow four different types, i.e., overlapping, hysteresis without memory effect, bipolar resistive switch, and unipolar resistive switch. The first three types can transform to the last one, once electroforming introduces enough charged defects to films and the resistance monotonically increases to a certain value. Unipolar resistive switch is due to conductive filamentary type and can be treated as an especial electroforming process. Furthermore, its high resistance status allows the second or third type at low voltage region. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4716867]