Detecting long-wave infrared in metal-silicon-metal photodiodes
Detecting long-wave infrared in metal-silicon-metal photodiodes
复制标题
检测金属硅金属光电二极管中的长波红外
DOI：
10.1117/12.3002861
复制
发表时间：
2024
期刊：
影响因子：
--
通讯作者：
Putnam, William
中科院分区：
文献类型：
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作者：
Li, Tianyou;Ates, Omer Emre;Putnam, William
光谱中红外部分的电磁辐射对于传感和光谱学至关重要。然而，探测中红外辐射是一项挑战。通常，中红外探测器依赖于奇异半导体结构中的光子吸收，或者它们使用相对缓慢（低带宽）的热效应。在这里，我们演示了长波红外激光脉冲在金属-半导体-金属光电二极管结构的检测。脉冲跨越7-12微米的光谱范围，并且具有<1 nJ的脉冲能量。我们的探测器由金和钛纳米天线发射器组成，发射器位于本征硅衬底上，与集电极之间有亚微米的间隙。我们的探测器在室温下工作，电流大于2 μA，带宽超过1.3 GHz。
Electromagnetic radiation in the mid-infrared portion of the spectrum is critical for sensing and spectroscopy. However, detecting mid-infrared radiation is challenging. Typically, mid-infrared detectors rely on photon absorption in exotic semiconductor structures, or they use relatively slow (low-bandwidth) thermal effects. Here, we demonstrate the detection of long-wave infrared laser pulses in metal-semiconductor-metal photodiode structures. The pulses span the spectral range from 7-12 microns and have pulse energies <1 nJ. Our detectors consist of gold and titanium nanoantenna emitters resting on an intrinsic silicon substrate and separated by sub-micron gaps from collector electrodes. Operating at room temperature, our detectors yield >2 μA currents and exhibit bandwidths exceeding 1.3 GHz.