Magnetic proximity and nonreciprocal current switching in a monolayer WTe2 helical edge
Magnetic proximity and nonreciprocal current switching in a monolayer WTe2 helical edge
复制标题
DOI:
10.1038/s41563-020-0620-0
复制
发表时间:
2020-01
期刊:
影响因子:
41.2
通讯作者:
Wenjin Zhao;Z. Fei;Tiancheng Song;Han Kyou Choi;T. Palomaki;Bosong Sun;P. Malinowski;M. McGuire;J. Chu;Xiaodong Xu;D. Cobden
中科院分区:
文献类型:
--
作者:
Wenjin Zhao;Z. Fei;Tiancheng Song;Han Kyou Choi;T. Palomaki;Bosong Sun;P. Malinowski;M. McGuire;J. Chu;Xiaodong Xu;D. Cobden
The integration of diverse electronic phenomena, such as magnetism and nontrivial topology, into a single system is normally studied either by seeking materials that contain both ingredients, or by layered growth of contrasting materials, , , , , , , –. The ability to simply stack very different two-dimensional van der Waals materials in intimate contact permits a different approach,. Here we use this approach to couple the helical edges states in a two-dimensional topological insulator, monolayer WTe2(refs., , , –), to a two-dimensional layered antiferromagnet, CrI3(ref. ). We find that the edge conductance is sensitive to the magnetization state of the CrI3, and the coupling can be understood in terms of an exchange field from the nearest and next-nearest CrI3layers that produces a gap in the helical edge. We also find that the nonlinear edge conductance depends on the magnetization of the nearest CrI3layer relative to the current direction. At low temperatures this produces an extraordinarily large nonreciprocal current that is switched by changing the antiferromagnetic state of the CrI3.