Double quantum dots as a high sensitive submillimeter-wave detector

Double quantum dots as a high sensitive submillimeter-wave detector
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双量子点作为高灵敏度亚毫米波探测器

DOI:
10.1063/1.1396628
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发表时间:
2001
影响因子:
4
通讯作者:
T. Kutsuwa
T. Kutsuwa
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
O. Astafiev;S. Komiyama;T. Kutsuwa

文献摘要

被引文献

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展示了一种由在 GaAs/AlxGa1−xAs 异质结构晶体中制造的平行双量子点组成的单电子晶体管 (SET),它可用作亚毫米波 (SMMW) 的极高灵敏度探测器。其中一个双点通过科恩模式等离子体激发被 SMMW 电离,这会影响通过另一个量子点的 SET 电导,从而产生光响应。探测器对于约 0.6 mm 波长的噪声等效功率估计在 70 mK 时达到 10−17 W/Hz 的量级。
A single-electron transistor (SET) consisting of parallel double quantum dots fabricated in a GaAs/AlxGa1−xAs heterostructure crystal is demonstrated and it serves as an extremely high sensitive detector of submillimeter waves (SMMWs). One of the double dots is ionized by a SMMW via Kohn-mode plasma excitation, which affects the SET conductance through the other quantum dot, yielding the photoresponse. The noise equivalent power of the detector for wavelengths of about 0.6 mm is estimated to reach the order of 10−17 W/Hz at 70 mK.