2.2–2.7 μm side wall corrugated index coupled distributed feedback GaSb based laser diodes
2.2–2.7 μm side wall corrugated index coupled distributed feedback GaSb based laser diodes
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DOI：
10.1088/0268-1242/30/6/065015
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发表时间：
2015-06
影响因子：
1.9
通讯作者：
Q. Gaimard;A. Larrue;M. Triki;B. Adelin;T. Nguyen-ba;Y. Rouillard;O. Gauthier-Lafaye;R. Teissier;A. Vicet
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文献类型：
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作者：
Q. Gaimard;A. Larrue;M. Triki;B. Adelin;T. Nguyen-ba;Y. Rouillard;O. Gauthier-Lafaye;R. Teissier;A. Vicet
报道了用分子束外延技术在GaSb衬底上生长的2.2 8和2.6 7μm的侧壁波纹分布式反馈式锑半导体激光器的建模、生长、加工、表征和集成。用生长的硅片制作脊形激光器，采用干涉光刻和光学光刻的方法在脊形边形成二阶Bragg光栅，并在氯基电感耦合等离子体反应器中刻蚀。该器件在室温下功率达到40 mW，边模抑制比优于28d B，调谐范围为3 nm。其中一个装置被成功地集成到可调谐半导体激光吸收光谱装置中，从而证明了它们适合于气体分析。
We report on the modeling, growth, processing, characterization and integration in a gas detection setup of side wall corrugated distributed feed-back antimonide diode lasers emitting at 2.28 and 2.67 μm. The laser structures were grown by molecular beam epitaxy on GaSb substrate. Ridge lasers were fabricated from the grown wafers according to the following process: a second order Bragg grating was defined on the sides of the ridges by interferometric lithography, optical lithography and etched in a Cl-based inductively coupled plasma reactor. The devices exhibit a power reaching 40 mW, a side mode suppression ratio better than 28 dB and a tuning range of 3 nm at room temperature. One of these devices was successfully integrated in a tunable diode laser absorption spectroscopy setup, thus demonstrating that they are suitable for gas analysis.