Ultrashort pulse generation with semiconductor lasers using intracavity phase- and amplitude pulse shaping
Ultrashort pulse generation with semiconductor lasers using intracavity phase- and amplitude pulse shaping
复制标题
使用腔内相位和幅度脉冲整形的半导体激光器产生超短脉冲
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
M. Hofmann
中科院分区：
文献类型：
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作者：
B. Döpke;J. Balzer;R. H. Pilny;C. Brenner;A. Klehr;G. Erbert;G. Tränkle;M. Hofmann
介绍了外腔锁模半导体激光器的腔内脉冲整形。在我们的方法中，利用双LC面板空间光调制器的脉冲整形器被用于锁模多量子井半导体激光器的腔内，以引入光谱分辨的位相操纵和在腔内传输的脉冲的损耗。利用这一点，我们产生了比在没有脉冲整形的传统外腔几何结构中获得的具有更宽频谱的脉冲。可以使用光栅压缩器将脉冲压缩到接近变换极限。
We present intra-cavity pulse shaping of external cavity mode-locked semiconductor lasers. In our approach, a pulse shaper utilizing a dual LC-panel spatial light modulator is used in the cavity of a mode-locked multi-quantum-well semiconductor laser to introduce spectrally resolved phase manipulation and losses to the pulse propagating in the cavity. Utilizing this, we generate pulses with broader spectra than obtained in conventional external cavity geometries without pulse shaping. The pulses can be compressed near to the transform limit using a grating compressor.