A self-powered, visible-blind ultraviolet photodetector based on n-Ga:ZnO nanorods/p-GaN heterojunction
A self-powered, visible-blind ultraviolet photodetector based on n-Ga:ZnO nanorods/p-GaN heterojunction
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DOI：
10.1016/j.sna.2017.08.007
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发表时间：
2017-11
影响因子：
4.6
通讯作者：
Lu Yang;Hai Zhou;Mengni Xue;Zehao Song;Hao Wang
中科院分区：
文献类型：
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作者：
Lu Yang;Hai Zhou;Mengni Xue;Zehao Song;Hao Wang
A self-powered visible-blind ultraviolet (UV) photodetector based onn-Ga:ZnO nanorods (GZO NRs)/p-GaN heterojunction was reported, in which then-type GZO NRs were prepared by the water bath method. In this study, we foundn-GZO NRs/p-GaN heterojunction devices showed better performance than those ofn-ZnO NRs/p-GaN heterojunction devices in terms of the ratio Iph/Idark, responsivity and detectivity. Under UV illumination with the light intensity of 1.31 mW/cm2, the ratio Iph/Idarkfor then-GZO NRs/p-GaN heterojunction was as high as 3.2 × 105at zero bias, which is about 75 times greater than that of an un-doped device (only 4.2 × 103). Also its responsivity reached 0.23 A/W which was three times larger than that ofn-ZnO NRs/p-GaN (∼0.08 A/W). The reasonn-GZO NRs/p-GaN heterojunction displayed lager light/dark current ratio, higher responsivity and detectivity, and more reliable self-powered performance at zero bias may be that in GZO NRs, the Ga-doping reduced the defect states in the nanorods, enhanced the conductivity and electron mobility of the ZnO material and benefited the photo-generated carriers transmission.
